The diffusion of Se was studied at 400 to 490C by removing layers. Two regions were distinguishable in the donor distribution profiles. The first had a low diffusion coefficient and a high surface concentration, near to the limit of solubility of selenium (8·x 1018/cm3). In the second region, a much larger diffusion coefficient and a surface concentration which was lower by two orders of magnitude (8·x 1016/cm3) with weak temperature dependence was found. The temperature dependences of the diffusion coefficients in the first and second regions could be described by:

D1(cm2/s) = 4.8·x 1013 exp[-4.1(eV)/kT]

D2(cm2/s) =1.9·x 1013 exp[-3.9(eV)/kT]

V.V.Gavrushko, O.V.Kosogov, V.D.Lebedeva: Soviet Physics Journal, 1991, 34[11], 981-3