Measurements were made of 75Se using a vapor source diffusion technique. These measurements yielded significantly lower values of the diffusion

coefficients than those previously reported. For selenium-saturated material,

D(cm2/s) =8.13 x 10-4exp[-1.33(eV)/kT]

while, for lead-saturated material,

D(cm2/s) = 0.553 exp[-2.22(eV)/kT]

An analysis of the results indicated that selenium atoms diffused by means of interstitial defects in Se-rich material and probably through Se vacancies in Pb-rich material.

R.L.Guldi, J.N.Walpole, R.H.Rediker: Journal of Applied Physics, 1973, 44[11], 4896-907