The diffusion of Al into Si was studied by using 4-point resistivity techniques. It was found that the results at 800 to 1350C could be described by:

D (cm2/s) = 5.0 x 10-1 exp[-3.0(eV)/kT]

Y.C.Kao: Electrochemical Technology, 1967, 5[3-4], 90-4