A high-vacuum open-tube method for the diffusion of Al into Si was described. The process permitted Al doping which involved surface concentrations that ranged from 1017 to 1019/cm2. A simplified mass transport model was developed in order to evaluate the diffusion data. It was found that the Al diffusivity at 1025 to 1175C could be described by:

D (cm2/s) = 1.80 x 100 exp[-3.2(eV)/kT]

W.Rosnowski: Journal of the Electrochemical Society, 1978, 125[6], 957-62