By using the spreading resistance technique, a study was made of diffusion into (111) samples from doped epitaxial source layers. It was found that, at 1167 to 1394C, the data could be described by:

D (cm2/s) = 6.55 x 10-2 exp[-3.44(eV)/kT]

The results were consistent with a point defect mechanism which involved a closely coupled vacancy-impurity complex.

R.N.Ghoshtagore: Physical Review B, 1971, 3[2], 397-403