By using 4-point resistivity methods, a study was made of the diffusion of As from the gas phase into an open-ended Si tube. It was found that the results at 1164 to 1280C, and for surface concentrations of between 1019 and 2 x 1019/cm3 could be described by:

D (cm2/s) = 8.3 x 104 exp[-5.20(eV)/kT]

Y.W.Hsueh: Electrochemical Technology, 1968, 6[9-10], 361-5