The implantation of As into polycrystalline samples, and drive-in diffusion into substrates, was investigated by back-scattering analysis and electrical measurements. It was found that the effective diffusivity of implanted As could be described by:

D (cm2/s) = 6.3 x 10-1 exp[-3.22(eV)/kT]

It was independent of the As concentration.

K.Tsukamoto, Y.Akasaka, K.Hone: Journal of Applied Physics, 1977, 48[5], 1815-21