The co-diffusion of As and B in monocrystalline samples was studied by means of secondary ion mass spectrometry and rapid thermal annealing. The migration of As alone during annealing at 1050 to 1100C could be described by:

D (cm2/s) = 3.5 x 101 exp[-4.00(eV)/kT]

The co-diffusion of As and B could be described by:

D (cm2/s) = 2.3 x 101 exp[-4.10(eV)/kT]

C.Gontrand, P.Ancey, H.Haddab, G.Chaussemy: Semiconductor Science and Technology, 1992, 7[2], 181-7