The redistribution of implanted box-shaped and Pearson B profiles during annealing was studied in 6H-samples by means of secondary ion mass spectrometry. The enhanced diffusion of B could be markedly suppressed by a surplus of C. It was proposed that the kick-out mechanism dominated B diffusion. During annealing at high temperatures, the concentration of ISi was reduced; thus leading to a transient behaviour of the B diffusion.

Transient-Enhanced Diffusion of Boron in SiC. M.Laube, G.Pensl: Materials Science Forum, 2000, 338-342, 941-4