By using the serial sectioning technique, the tracer diffusion of 198Au into single crystals was studied. Some effect of the dislocation density was detected. This was explained in terms of a model in which vacancy generation occurred at climbing grown-in dislocations. The values of the 2 effective diffusion coefficients for the dissociative mechanism were determined from the present, and literature, results. One coefficient took a value of about 3 x 10-7cm2/s at 900 to 1100C, while the other could be described by:

D (cm2/s) = 1.94 x 10-7 exp[-0.61(eV)/kT]

at 900 to 1200C. The tracer monovacancy self diffusion coefficient was given by:

D (cm2/s) = 1.98 x 10-7 exp[-2.40(eV)/kT]

at 900 to 1200C.

F.A.Huntley, A.F.W.Willoughby: Philosophical Magazine, 1973, 28[6], 1319-40