The diffusion of Au in dislocation-free or plastically deformed Si (1011 to 1013dislocations/m2) was measured using the spreading-resistance technique. The Au profiles produced in dislocation-free Si slices by in-diffusion from both surfaces had non-erfc-type U-shapes. The kick-out model was used to calculate the contribution of self-interstitials to the (uncorrelated) Si self-diffusion

coefficient,

D(m2/s) =0.064 exp[-4.80(eV)/kT]

at 1073 to 1473K. In highly dislocated Si, the diffusion of Au was considerably faster than in dislocation-free Si. From the erfc-type penetration profiles found in this case, effective Au diffusion coefficients were deduced,

D(m2/s) = 0.0064 exp[-3.93(eV)/kT]

for 1180 to 1427K.

N.A.Stolwijk, J.Hölzl, W.Frank, E.R.Weber, H.Mehrer: Applied Physics A, 1986, 39[1], 37-48