By using p-n junction and 4-point probe resistivity techniques, an investigation was made of the diffusion of B into n-type single crystals from a doped oxide layer which was produced by reactive sputtering. The diffusion profiles which were obtained corresponded closely to the complementary error function. At 1100 to 1270C, and for a concentration of about 1016/cm3, the data could be described by:

D (cm2/s) = 1.5 x 10-1 exp[-4.25(eV)/kT]

K.Nagano, S.Iwauchi, T.Tanaka: Japanese Journal of Applied Physics, 1968, 7[11], 1361-7