The diffusion of B from sources which were implanted at 80keV was investigated at 1000 to 1200C, for doses of between 1014 and 2 x 1015/cm2. Diffusion was carried out in a steam ambient, and the oxide thicknesses which were produced ranged from 0.0002 to 0.0012mm. Normal diffusion was observed, except for short-term tests at 1000C. The results could be described by:

D (cm2/s) = 3.22 x 10-2 exp[-3.02(eV)/kT]

J.L.Prince, F.N.Schwettmann: Journal of the Electrochemical Society, 1974, 121[5], 705-10