The migration of B in (100), (110) and (111) samples was investigated, at 950 to 1200C, using drive-in experiments. When carried out in a dry O ambient, the results obeyed:

D111 (cm2/s) = 3.25 x 101 exp[-3.34(eV)/kT]

D110 (cm2/s) = 4.17 x 101 exp[-3.33(eV)/kT]

D100 (cm2/s) = 6.06 x 101 exp[-3.05(eV)/kT]

G.Masetti, S.Solmi, G.Soncini: Solid State Electronics, 1976, 19[6], 545-6