The p-n junction and resistivity methods were used to study the diffusion of B into the (111) and (100) planes of single crystals with various B surface concentrations. The diffusivity of B into the (100) plane was found to be higher than that into the (111) plane. The higher the B surface concentration, the higher was the diffusivity and the lower was the activation energy for B diffusion:

(111), 8 x 1019B/cm3:     D (cm2/s) = 1.40 x 102 exp[-4.09(eV)/kT]

(111), 2 x 1020B/cm3:     D (cm2/s) = 9.50 x 101 exp[-4.04(eV)/kT]

(111), 1 x 1021B/cm3:     D (cm2/s) = 8.20 x 100 exp[-3.65(eV)/kT]

(100), 8 x 1019B/cm3:     D (cm2/s) = 1.20 x 102 exp[-4.04(eV)/kT]

(100), 2 x 1020B/cm3:     D (cm2/s) = 3.00 x 100 exp[-3.57(eV)/kT]

(100), 1 x 1021B/cm3:     D (cm2/s) = 1.90 x 100 exp[-3.48(eV)/kT]

M.Katsuta, T.Ouchiyama: Shin Nippon Denki Giho, 1970, 5[1], 9-14