A direct-current reactive plasma sputtering technique was used to obtain a B diffusion source in the form of a borosilicate glass. The sheet resistance of Si was measured by using a 4-point probe technique, and the depth of the diffusion

layer was determined by lapping and staining. The B diffusivity, as a function of B surface concentration, was described by:

3 x 1018B2O3/cm3:     D (cm2/s) = 4.50 x 104 exp[-4.84(eV)/kT]

6 x 1019B2O3/cm3:     D (cm2/s) = 1.00 x 103 exp[-4.37(eV)/kT]

1 x 1020B2O3/cm3:     D (cm2/s) = 1.00 x 10-2 exp[-2.95(eV)/kT]

5 x 1020B2O3/cm3:     D (cm2/s) = 2.50 x 10-3 exp[-2.72(eV)/kT]

G.D.Bagratishvili, R.B.Dzhanelidze, D.A.Jishiashvili, L.V.Piskanovski, Z.N.Shiolashvili: Physica Status Solidi A, 1979, 56[1], 27-35