The co-diffusion of As and B in monocrystalline samples was studied by means of secondary ion mass spectrometry and rapid thermal annealing. The migration of B alone during annealing at 1050 to 1100C could be described by:

D (cm2/s) = 3.0 x 100 exp[-3.43(eV)/kT]

The co-diffusion of B and As could be described by:

D (cm2/s) = 9.0 x 10-1 exp[-3.43(eV)/kT]

C.Gontrand, P.Ancey, H.Haddab, G.Chaussemy: Semiconductor Science and Technology, 1992, 7[2], 181-7