The intrinsic diffusion of B in high-purity epitaxial Si films was studied. At 810 to 1050C, the B diffusion could be described by:

D (cm2/s) = 6 x 10-2 exp[-3.12(eV)/kT]

These results differed from those of many previous studies, but this deviation could be attributed to slow transients before equilibrium concentrations of point defects were established below about 1000C.

J.S.Christensen, H.H.Radamson, A.Y.Kuznetsov, B.G.Svensson: Applied Physics Letters, 2003, 82[14], 2254-6