The concentration profiles of B which had been diffused, from polycrystalline material, into underlying monocrystalline material were analyzed by means of secondary ion mass spectrometry. The co-diffusion of As and B was studied in an emitter and extrinsic base configuration. In a first poly-Si layer, the diffusivity could be described by:

D (cm2/s) = 0.019 exp[-2.5(eV)/kT]

In a second poly-Si layer, the diffusivity could be described by:

D (cm2/s) = 0.000032 exp[-1.86(eV)/kT]

A.Merabet, C.Gontrand: Physica Status Solidi A, 1994, 145[1], 77-88