Tracer diffusion coefficients, and their dependence upon temperature, pressure and isotopic mass, were determined for B and Ga as impurities in (111)-oriented single crystals. The measurements involved stable isotopes and secondary ion mass spectrometry. The diffusivities, measured between 850 and 1150C, were found to be represented by:

DB-Si(cm2/s) = 33.7 exp[-3.93(eV)/kT]

DGa-Si(cm2/s) = 6.5 exp[-3.59(eV)/kT]

U.Södervall, M.Friesel, A.Lodding: Journal of the Chemical Society - Faraday Transactions, 1990, 86[8], 1293-8