Transient ion drift in depletion regions of a Schottky barrier was used to investigate diffusion in B- or Al-doped material. It was shown that, within the studied temperature range, Cu-B pairing was negligible. Excellent agreement with published diffusivity data was found for Cu ions, as described by the expression:

D (cm2/s) = 0.0045 exp[-0.39(eV)/kT]

A.Zamouche, T.Heiser, A.Mesli: Applied Physics Letters, 1995, 66[5], 631-3