The diffusion of Ge in B-doped material (about 1016 or 1018/cm3) was investigated at 1000 to 1200C by using radiotracer and sectioning techniques. At low doping levels, it was found that the diffusivity was described by:

D (cm2/s) = 1.38 x 105 exp[-5.39(eV)/kT]

Doping led to an enhancement of Ge diffusion. The results were analyzed by assuming that the mechanism involved singly-charged and neutral vacancies. Below 1050C, diffusion coefficients which were higher than expected were measured in both lightly and heavily doped material.

A.L.Bouchetout, N.Tabet, C.Monty: Materials Science Forum, 1986, 10-12, 127-32