A sectioning technique was used to study the diffusion of 71Ge along the [111]-type directions of single crystals which were doped with P to about 1014/cm3. It was found that, at 1500 to 1600K, the results could be described by:

D (cm2/s) = 1.54 x 103 exp[-4.7(eV)/kT]

This value for the activation energy was in reasonable agreement with a simple theoretical description of impurity diffusion.

G.L.Mcvay, A.R.DuCharme: Journal of Applied Physics, 1973, 44[3], 1409-10