A method was developed for determining the surface diffusion coefficient and activation energy of Ge adatoms on (001). That is, Ge self-assembled quantum dots which were grown on a relaxed SiGe buffer-layer nucleated preferentially over a network of buried 60° dislocations. The diffusion of Ge adatoms on Si (001) could be described by:

D (cm2/s) = 2.53 x 10-7 exp[-0.676(eV)/kT]

at 650 to 725C.

H.J.Kim, Z.M.Zhao, J.Liu, V.Ozolins, J.Y.Chang, Y.H.Xie: Journal of Applied Physics, 2004, 95[11], 6065-71