The diffusivity in amorphous material, at 500 to 700K, was measured by monitoring changes in the paramagnetic center profiles which arose from H interactions with dangling bonds. The values of the diffusion parameters depended upon the method of preparation:

electron-beam evaporated:     D (cm2/s) = 1 x 10-3 exp[-1.4(eV)/kT]

monosilane deposited:     D (cm2/s) = 2 x 10-4 exp[-1.2(eV)/kT]

ion-bombarded:     D (cm2/s) = 3 x 10-8 exp[-0.7(eV)/kT]

It was concluded that the diffusion of H in amorphous films, produced by ion bombardment, was controlled by the capture of H at dangling bonds. In samples which were prepared by evaporation, or the decomposition of monosilane, the principal mechanism was concluded to be the capture of H by pores and micropores.

A.V.Dvurechenski, I.A.Ryazantsev, L.S.Smirnov: Fizika i Tekhnika Poluprovodnikov, 1982, 16[4], 621-4