The diffusion of Ni in P-doped Czochralski monocrystals was studied by using 63Ni radiotracer, autoradiographic and sectioning techniques. It was found that the data for 220 to 540C were described by:

D (cm2/s) = 6.0 x 10-4 exp[-0.76(eV)/kT]

The data supported an interstitial diffusion mechanism, with no participation of native Si defects. An analysis of previous results for Ni diffusion in Si revealed a scatter of 10 orders of magnitude. It was suggested that studies which involved low diffusion coefficients and high activation energies were dubious; due to problems which were associated with surface conditions and the limits of Ni detection.

F.H.M.Spit, D.Gupta, K.N.Tu: Physical Review B, 1989, 39[2], 1255-60