Radiotracer methods were used to study the migration of Ni at 800 to 1300C. The diffusion coefficient ranged from 10-5 to 10-4cm2/s, and obeyed:

D (cm2/s) = 2.0 x 10-3 exp[-0.47(eV)/kT]

The majority of Ni atoms were neutral and formed interstitial solid solutions. The electrically-active Ni atoms were located on Si lattice sites and amounted to 0.1% of the total Ni content. The total concentration of Ni was independent of the nature and concentration of defects. The Ni atoms diffused via a mainly interstitial mechanism.

M.K.Bakhadyrkhanov, S.Zainabidinov, A.Khamidov: Fizika i Tekhnika Poluprovodnikov, 1980, 14[2], 412-3 (abstract only given)