Oxidized wafer samples were subjected to steam oxidation at 700 to 1240C. The depth profiles of 18O tracers were determined by using Cs+ secondary ion mass spectrometry. Over the temperature range studied, the diffusivity could be described by:

D (cm2/s) = 7 x 10-2 exp[-2.44(eV)/kT]

J.C.Mikkelsen: Applied Physics Letters, 1982, 40[4], 336-8