The solubility and diffusivity of O was studied at 1000 to 1375C by using a charged particle activation technique. Wafers were heated in O or Ar, and the resultant depth profiles were determined by etching and 18F activity measurements. It was found that the diffusion data at above 1150C could be described by:

D (cm2/s) = 3.2 x 100 exp[-67.1(kcal/mol)/RT]

At lower temperatures, the activation energy appeared to decrease with decreasing temperature.

Y.Itoh, T.Nozaki: Japanese Journal of Applied Physics, 1985, 24[3], 279-84