The out-diffusion of O, from Czochralski wafers which had been annealed at 1000 or 1200C in a H ambient, was studied by means of secondary ion mass spectroscopy. The expression,

D (cm2/s) = 1.41 x 102 exp[-3.1(eV)/kT]

was deduced by fitting the O secondary ion mass spectroscopy profile.

L.Zhong, F.Shimura: Journal of Applied Physics, 1993, 73[2], 707-10