The out-diffusion of O from (100) Czochralski-grown silicon, doped with antimony to concentrations ranging from 6 x 1015 to 3 x 1018atoms/cm3, was measured using secondary ion mass spectrometry. The diffusivity of 16O was determined from the oxygen depth profiles. It was found that the out-diffusion of 16O was not influenced by the Sb dopant concentration. The diffusivity of oxygen at 1100C was 1.1 x 10-10cm2/s; consistent with:

D(cm2/s) = 0.07 exp[-2.44(eV)/kT]

W.Wijaranakula, J.H.Matlock, H.Mollenkopf: Applied Physics Letters, 1988, 53[12], 1068-70