Measurements of O diffusion in silicon yielded the relationship,

D(cm2/s) = 0.23 exp[-2.561(eV)/kT]

as determined from direct measurement, at lower temperatures, of the one-jump process for interstitial oxygen from one Si-Si bond to an adjacent one. The diffusion constant was therefore known for 11 decades and resulted from a single microscopically identified process.

G.D.Watkins, J.W.Corbett, R.S.McDonald: Journal of Applied Physics, 1982, 53[10], 7097-8