The diffusion of P into B-doped p-type (111)-oriented wafers was studied by using an open-tube diffusion system (with phosphine in N2 as the impurity
source), and measuring diffusion penetration via junction depth and sheet resistance techniques. The data for 850 to 1150C could be described by:
D (cm2/s) = 6.0 x 10-6 exp[-1.90(eV)/kT]
Y.W.Hsueh: Journal of the Electrochemical Society, 1970, 117[6], 807-11