The 32P tracer was diffused, into (111) float-zone material in a H2 atmosphere, from an epitaxially grown 32P-doped Si source layer. The 32P diffusion profiles, obtained by sectioning and counting of each section, exhibited Fick-type behavior and indicated much lower diffusion coefficients than those reported when using oxide dopant sources on a free surface. At 1400 to 1600K, the results could be described by:

D (cm2/s) = 5.0 x 10-2 exp[-3.3(eV)/kT]

R.N.Ghoshtagore: Applied Physics Letters, 1970, 17[4], 137-8