By using the spreading resistance technique, a study was made of diffusion into (111) samples from doped epitaxial source layers which were deposited in a flowing H2 atmosphere. It was found that, at 1190 to 1405C, the data could be described by:

D (cm2/s) = 2.14 x 10-1 exp[-3.65(eV)/kT]

The results were consistent with a point defect mechanism which involved a closely coupled vacancy-impurity complex.

R.N.Ghoshtagore: Physical Review B, 1971, 3[2], 397-403