The serial sectioning method was used to study the diffusion of 124Sb into 0.005 to 0.01mm-thick epitaxial films of p-type material. It was found that, for dislocation densities of 103 to 104/cm2, the measured diffusivities agreed with those for Sb diffusion in single crystals. At 1250 to 1500K, the data could be described by:

D (cm2/s) = 7.9 x 100 exp[-3.98(eV)/kT]

For dislocation densities of 3 x 106 to 6 x 106/cm2, the results at 1250 to 1500K were described by:

D (cm2/s) = 4.4 x 100 exp[-3.76(eV)/kT]

V.A.Uskov, S.P.Svetlov: Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, 1972, 15[7], 145-7