Samples were prepared from (111)-oriented p-type monocrystalline wafers, and Sb-doped SiO2 was chemical vapor deposited onto the surface. Diffusion experiments were carried out using surface concentrations of 5 x 1018, 1 x 1019, or 4.5 x 1019/cm3. The concentration profiles were determined by using resistivity measurements. The diffusion data, at 1000 to 1150C, which corresponded to the latter 3 concentrations could be described by:

5 x 1018/cm3:     D (cm2/s) = 9.70 x 103 exp[-4.87(eV)/kT]

1 x 1019/cm3:     D (cm2/s) = 3.65 x 102 exp[-4.44(eV)/kT]

4.5 x 1019/cm3:     D (cm2/s) = 1.43 x 102 exp[-4.30(eV)/kT]

S.H.Song, S.Matsumoto, T.Niimi: Japanese Journal of Applied Physics, 1979, 18[11], 2181-2