The Se was diffused into Si doped with various concentrations of group-III elements. The solubility of Se at 850 to 1300C was deduced from Hall-effect measurements. Diffusion measurements between 800 and 1250C yielded,

D(cm2/s) = 2.47 exp[-2.84(eV)/kT]

H.R.Vydyanath, J.S.Lorenzo, F.A.Kröger: Journal of Applied Physics, 1978, 49[12], 5928-37