Anodization etching and radioactive tracer analyses were used to study self-diffusion in single crystals which had various degrees of perfection and doping. The O content was equal to about 5 x 1017/cm3, and the dislocation densities were of the order of 100/cm2 or less. For intrinsic material at 1100 to 1300C, it was found that:

D (cm2/s) = 9.0 x 103 exp[-5.13(eV)/kT]

Doping to above intrinsic levels increased the diffusivity. It was proposed that Si diffused via a vacancy mechanism. The effect of n-type doping was attributed to an increase in the total vacancy concentration which was caused by excess electrons.

J.M.Fairfield, B.J.Masters: Journal of Applied Physics, 1967, 38[8], 3148-54