Loop annealing was used to study self diffusion for a wide range of dopant contents. It was found that the diffusion coefficient decreased as the n-type dopant content was decreased or the p-type dopant concentration was increased. At a given temperature, the diffusion coefficient depended linearly upon the electron concentration. This behavior was in agreement with an acceptor-type behavior of the point defects which were responsible for self diffusion. At 970 to 1070C, the results could be described by:

D (cm2/s) = 5.8 x 100 exp[-4.1(eV)/kT]

The self-diffusion coefficient for intrinsic material agreed with those reported for higher temperatures. There appeared to be a slight curvature of the Arrhenius plot.

I.R.Sanders, P.S.Dobson: Journal of Materials Science, 1974, 9[12], 1987-93