Self-diffusion in intrinsic material was studied by using a resonance broadening method at 900 to 1100C. The material was a polished float-zone p-type (111) wafer. The data for the above temperature range could be described by:

D (cm2/s) = 8.0 x 100 exp[-4.1(eV)/kT]

J.Hirvonen, A.Anttila: Applied Physics Letters, 1979, 35[9], 703-5