Diffusion of the neutral impurity into silicon in the presence or absence of acceptor- or donor-type impurities, such as B or P, was investigated using neutron-activation analysis. The diffusivity of Sn alone in near-intrinsic material was described by:

D(cm2/s) =32 exp[-98(kJ/mol)/RT]

T.H.Yeh, S.M.Hu, R.H.Kastl: Journal of Applied Physics, 1968, 39[9], 4266-71