Monocrystalline samples were diffused with 48V, and annealed at 1100 to 1250C. The results showed that the diffusivity obeyed:

D (cm2/s) = 6.1 x 10-1 exp[-2.8(eV)/kT]

G.K.Azimov, S.Z.Zainabidinov, J.I.Kozlov: Fizika i Tekhnika Poluprovodnikov, 1989, 23[10], 1890-1. (Soviet Physics - Semiconductors, 1989, 23[10], 1169-70)