The diffusion of yttrium in silicon was here studied for the first time. The diffusion was performed in air or vacuum at 1100 to 1250C. The temperature dependence of the diffusivity of yttrium in silicon was described by:

D(cm2/s) = 8 x 10-3exp[-2.9(eV)/kT]

D.E.Nazyrov, M.I.Bazarbaev, A.A.Iminov, Semiconductors, 2006, 40[7], 768-9