The effect of Ge alloying upon B diffusion in amorphous Si1−xGex alloys was reported for x = 0 to 0.24. The diffusivity was not observed to exhibit any transient decay. The diffusivity decreased with increasing Ge concentration. The activation energy for B diffusion appeared to increase from 2.8eV for amorphous Si to 3.6eV for amorphous Si0.76Ge0.24. It was suggested that, in these alloys, Ge distorted the amorphous Si network thereby increasing B trapping by Si. The results were described by:

Si:      D(cm2/s) = 3.5 x 100 exp[-2.8(eV/kT]

Si88Ge12:     D(cm2/s) = 4.4 x 100 exp[-2.8(eV/kT]

Si82Ge18:    D(cm2/s) = 2.1 x 104 exp[-3.4(eV/kT]

Si76Ge24:     D(cm2/s) = 7.4 x 104 exp[-3.6(eV/kT]

L.A.Edelman, M.S.Phen, K.S.Jones, R.G.Elliman, L.M.Rubin: Applied Physics Letters, 2008, 92[17], 172108