The temperature dependence of the diffusion coefficients of Al, Ga and In was studied. The cleavage cross-sectional surface of a diffused ZnSe wafer was observed by the SEM cathodoluminescence method. The following relations were obtained:

D(cm2/s) = 1.18 x 10-1 exp[-1.92(eV)/kT]

H.Takenoshita, K.Kido, K.Sawai: Japanese Journal of Applied Physics – 1, 1986, 25[10], 1610-11