The diffusion coefficient of Cd in CdSe-ZnSe single quantum well structures

grown pseudomorphically on GaAs(001) was determined by high-resolution transmission electron microscopy of annealed single quantum well structures and subsequent digital analysis of lattice images. It was found that, for 340 to 400C:

D(cm2/s) = 1.9 x 10-4exp(- 1.8 [eV]/kT).

A.Rosenauer, T.Reisinger, E.Steinkirchner, J.Zweck, W.Gebhardt: Journal of Crystal Growth, 1995, 152[1-2], 42-50