The temperature dependence of the diffusion coefficients of Al, Ga and In was studied. The cleavage cross-sectional surface of a diffused ZnSe wafer was observed by the SEM cathodoluminescence method. The following relations were obtained:

D(cm2/s) = 6.76 x 10-2 exp[-1.80(eV)/kT]

H.Takenoshita, K.Kido, K.Sawai: Japanese Journal of Applied Physics – 1, 1986, 25[10], 1610-11