Diffusion of aluminum in silicon carbide was studied by Al implantation into single crystals and profile analyses using secondary ion mass spectrometry. The bulk diffusion coefficient of Al at 1350 to 1800C was given by:

D(cm2/s) = 1.3 x 10-8 exp[-231(kJ/mol)/RT]

Y.Tajima, K.Kijima, W.D.Kingery: The Journal of Chemical Physics, 1982, 77[5], 2592-8