The impurity tracer diffusion of 51Cr in chemical vapour deposited β-phase material was studied at 973 to 1873K. The temperature dependence of the bulk diffusion of Cr could be expressed by an Arrhenius equation:

D (m2/s) = 9.5 x 10-15 exp[-81(kJ/mol)/RT]

The diffusion coefficient of Cr was much higher than those for self-diffusion in SiC.

K.Takano, H.Nitta, H.Seto, C.G.Lee, K.Yamada, Y.Yamazaki, H.Sato, S.Takeda, E.Toya, Y.Iijima: Science and Technology of Advanced Materials, 2001, 2[2], 381-8